power transistors 1 publication date: march 2003 sjd00162bed 2SC5597 silicon npn triple diffusion mesa type for horizontal deflection output features ? high breakdown voltage, and high reliability through the use of a glass passivation layer ? high-speed switching ? wide safe operation area absolute maximum ratings t c = 25 c electrical characteristics t c = 25 c 3 c unit: mm note) measuring methods are based on japanese industrial standard jis c 7030 measuring methods for transistors. parameter symbol conditions min typ max unit collector-base cutoff current (emitter open) i cbo v cb = 1 000 v, i e = 050 a v cb = 1 700 v, i e = 01ma emitter-base cutoff current (collector open) i ebo v eb = 7 v, i c = 050 a forward current transfer ratio h fe v ce = 5 v, i c = 11 a 6 12 ? collector-emitter saturation voltage v ce(sat) i c = 11 a, i b = 2.75 a 3 v base-emitter saturation voltage v be(sat) i c = 11 a, i b = 2.75 a 1.5 v transition frequency f t v ce = 10 v, i c = 0.1 a, f = 0.5 mhz 3 mhz storage time t stg i c = 11 a, resistance loaded 3.0 s fall time t f i b1 = 2.75 a, i b2 = ? 5.5 a 0.2 s parameter symbol rating unit collector-base voltage (emitter open) v cbo 1 700 v collector-emitter voltage (e-b short) v ces 1 700 v collector-emitter voltage (base open) v ceo 600 v emitter-base voltage (collector open) v ebo 7v base current i b 11 a collector current i c 22 a peak collector current * i cp 30 a collector power dissipation p c 200 w t a = 25 c 3.5 junction temperature t j 150 c storage temperature t stg ? 55 to + 150 c 20.0 0.5 2.0 0.3 3.0 0.3 1.0 0.2 5.45 0.3 10.9 0.5 123 26.0 0.5 (10.0) (2.5) solder dip (6.0) (4.0) (2.0) (1.5) (1.5) 20.0 0.5 5.0 0.3 3.3 0.2 (1.5) 2.7 0.3 0.6 0.2 (3.0) (3.0) (2.0) 1: base 2: collector 3: emitter top-3l-a1 package note) * : non-repetitive peak collector current
2SC5597 2 sjd00162bed p c ? t a safe operation area safe operation area (horizontal operation) 250 200 150 100 50 0 0 50 100 150 (1) (2) (3) p c = 3.5 w p c = 12 w ambient temperature t a ( c ) collector power dissipation p c ( w ) (1) t c = t a (2) with a 100 100 2 mm al heat sink (3) without heat sink i cp i c d c t = 100 s t = 1 ms t = 10 ms non repetitive pulse t c = 25 c collector current i c ( a ) collector-emitter voltage v ce ( v ) 1 10 100 1 000 10 ? 3 10 ? 1 10 ? 2 10 1 100 safe operation area for the 2SC5597 30 20 10 0 01 000 500 1 500 2 000 collector current i c ( a ) collector-emitter voltage v ce ( v ) f = 64 khz, t c < 90 c area of safe operation for the single pulse load curve due to discharge in the high- voltage rectifier tube during horizontal operation < 1 ma
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